| Napięcie - Forward (VF) (Max) @ Jeśli: | 1.3V @ 3A |
|---|---|
| Napięcie - DC Rewers (VR) (maks): | 200V |
| Prędkość: | Standard Recovery >500ns, > 200mA (Io) |
| Seria: | Military, MIL-PRF-19500/427 |
| Odwrócona Recovery Time (TRR): | 2µs |
| Opakowania: | Bulk |
| Package / Case: | A, Axial |
| Temperatura pracy - złącze: | -65°C ~ 200°C |
| Rodzaj mocowania: | Through Hole |
| Typ diody: | Standard |
| Obecny - Reverse Przeciek @ Vr: | 500nA @ 200V |
| Obecny - Średnia Spirytus (Io): | 1A |
| Pojemność @ VR F: | - |
JANTXV1N5611
TVS DIODE 40.3VWM 63.5VC G-PKG
JANTXV1N5616
DIODE GEN PURP 400V 1A AXIAL
JANTXV1N5614US
DIODE GEN PURP 200V 1A D5A
JANTXV1N5556
TVS DIODE 40.3VWM 63.5VC DO13
JANTXV1N5615US
DIODE FAST REC 200V 1A D-5A
JANTXV1N5613
TVS DIODE 175VWM 265VC G-PKG
JANTXV1N5558
TVS DIODE 175VWM 265VC DO13
JANTXV1N5612
TVS DIODE 49VWM 78.5VC G-PKG
JANTXV1N5616US
DIODE GEN PURP 400V 1A D5A
JANTXV1N5615
DIODE GEN PURP 200V 1A AXIAL
SIT1602BI-13-XXE-48.000000D
-40 TO 85C, 2520, 50PPM, 2.25V-3
SIT1602BI-23-33N-14.000000E
-40 TO 85C, 3225, 50PPM, 3.3V, 1
SIT8008BI-13-33S-11.289600E
OSC MEMS 11.2896MHZ LVCMOS SMD
SIT1602BC-11-28N-33.333330E
-20 TO 70C, 2520, 20PPM, 2.8V, 3
SIT1602BC-82-33S-4.096000T
-20 TO 70C, 7050, 25PPM, 3.3V, 4
SIT1602BI-32-18S-74.176000Y
-40 TO 85C, 5032, 25PPM, 1.8V, 7
SIT8008BI-12-25E-48.000000D
OSC MEMS 48.0000MHZ LVCMOS SMD
TA-11.0592MCE-T
OSC MEMS 11.0592MHZ CMOS SMD
KC2016K13.5600C10E00
OSC XO 13.5600MHZ CMOS SMD
SIT1602BC-71-18N-25.000000G
-20 TO 70C, 2016, 20PPM, 1.8V, 2
