| Cena | |
|---|---|
| 1 | $2.26 |
| 10 | $2.033 |
| 100 | $1.634 |
| 500 | $1.343 |
| 1000 | $1.113 |
| VGS (th) (Max) @ Id: | 4V @ 150µA |
|---|---|
| Vgs (maks.): | ±20V |
| Technologia: | MOSFET (Metal Oxide) |
| Dostawca urządzeń Pakiet: | TO-220AB |
| Seria: | HEXFET® |
| RDS (Max) @ ID, Vgs: | 9 mOhm @ 58A, 10V |
| Strata mocy (max): | 230W (Tc) |
| Opakowania: | Tube |
| Package / Case: | TO-220-3 |
| temperatura robocza: | -55°C ~ 175°C (TJ) |
| Rodzaj mocowania: | Through Hole |
| Pojemność wejściowa (Ciss) (maks.) @ Vds: | 4820pF @ 50V |
| Opłata bramkowa (Qg) (maksymalna) @ Vgs: | 120nC @ 10V |
| Rodzaj FET: | N-Channel |
| Cecha FET: | - |
| Napięcie Napędu (Max Rds On, Min Rds On): | 10V |
| Spust do źródła napięcia (Vdss): | 100V |
| Prąd - Ciągły Odpływ (Id) @ 25 ° C: | 97A (Tc) |
IRFB4510G
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MOSFET N-CH 100V 97A TO-220AB
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1404KL-04W-B50-B00
FAN AXIAL 35X10MM 12VDC WIRE
ATS-X50290B-C1-R0
SUPERGRIP HEATSINK 29X29X7.5MM
ATS-04B-80-C1-R0
HEATSINK 30X30X15MM R-TAB
