| Cena | |
|---|---|
| 2500 | $0.169 |
| 5000 | $0.158 |
| 12500 | $0.148 |
| 25000 | $0.14 |
| 62500 | $0.137 |
| VGS (th) (Max) @ Id: | 3.5V @ 30µA |
|---|---|
| Vgs (maks.): | ±20V |
| Technologia: | MOSFET (Metal Oxide) |
| Dostawca urządzeń Pakiet: | PG-TO252-3 |
| Seria: | CoolMOS™ CE |
| RDS (Max) @ ID, Vgs: | 3 Ohm @ 400mA, 13V |
| Strata mocy (max): | 18W (Tc) |
| Opakowania: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| temperatura robocza: | -55°C ~ 150°C (TJ) |
| Rodzaj mocowania: | Surface Mount |
| Pojemność wejściowa (Ciss) (maks.) @ Vds: | 84pF @ 100V |
| Opłata bramkowa (Qg) (maksymalna) @ Vgs: | 4.3nC @ 10V |
| Rodzaj FET: | N-Channel |
| Cecha FET: | - |
| Napięcie Napędu (Max Rds On, Min Rds On): | 13V |
| Spust do źródła napięcia (Vdss): | 500V |
| Prąd - Ciągły Odpływ (Id) @ 25 ° C: | 1.7A (Tc) |
IPD50R399CP
MOSFET N-CH 550V 9A TO-252
IPD50R399CPATMA1
LOW POWER_LEGACY
IPD50R500CEBTMA1
MOSFET N-CH 500V 7.6A PG-TO252
IPD50R520CP
MOSFET N-CH 550V 7.1A TO-252
IPD50R500CE
IPD50R3K0CEAUMA1
MOSFET N-CH 500V 1.7A PG-TO-252
IPD50R399CPBTMA1
LOW POWER_LEGACY
IPD50R500CEATMA1
MOSFET N-CH 500V 7.6A PG-TO252
IPD50R3K0CE
IPD50R500CEAUMA1
MOSFET N-CH 550V 7.6A TO252
VS-VSKT320-16PBF
MODULE THYRISTOR 230A MAGN-A-PAK
RN2502(TE85L,F)
TRANS 2PNP PREBIAS 0.3W SMV
2SD1624S-TD-E
TRANS NPN 50V 3A PCP
MMBT5551
TRANS NPN 160V 0.6A SOT-23
DZTA42Q-13
TRANS NPN 300V 500MA SOT223
MMBTA92_D87Z
TRANS PNP 300V 0.5A SOT-23
OD4006-05LSS01A
FAN AXIAL 40X6MM 5VDC WIRE
ATS-14B-67-C1-R0
HEATSINK 45X45X10MM L-TAB
ATS-11D-150-C1-R0
HEATSINK 35X35X25MM L-TAB
ATS-09E-82-C2-R0
HEATSINK 30X30X25MM R-TAB T766
